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 2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * Low-On Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2)
Mechanical Data
* * * * * * * *
SOT-323
Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
Drain
D
Gate
G
Source
S
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS ID Value 60 60 20 40 115 73 800 Unit V V V mA
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gain-Source Voltage Drain Current (Note 1)
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 200 1.60 625 -55 to +150 Unit mW mW C /W C
Characteristic Total Power Dissipation (Note 1) Derating above TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
2N7002W
Document number: DS30099 Rev. 14 - 2
1 of 3 www.diodes.com
August 2008
(c) Diodes Incorporated
2N7002W Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 125C Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 125C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C IDSS IGSS VGS(th) @ TJ = 25C RDS(ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.0 0.5 80 Typ 70 1.8 2.6 1.0 22 11 2.0 7.0 11 Max 1.0 500 10 2.0 7.5 13.5 50 25 5.0 20 20 Unit V A nA V A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS = 10V, ID = 0.2A VDS = 25V, VGS = 0V f = 1.0MHz
VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25
3. Short duration pulse test used to minimize self-heating effect.
1.0 ID, DRAIN-SOURCE CURRENT (A)
7 6 5 4 3 2 1 0 0 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2 1.0
0.8
0.6
0.4
0.2
0
0
2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics
1
5
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -55
6
5
4
3
2
1 0 0
-30 -5 20 45 70 95 120 145 170 TJ, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature
4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage
2
2N7002W
Document number: DS30099 Rev. 14 - 2
2 of 3 www.diodes.com
August 2008
(c) Diodes Incorporated
2N7002W Ordering Information
Part Number 2N7002W-7-F
Notes:
(Notes 4) Case SOT-323 Packaging 3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K72 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K72
Date Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
YM
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
Package Outline Dimensions
A
TOP VIEW
BC
G H K M
J
D
F
L
SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z C
Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
2N7002W
Document number: DS30099 Rev. 14 - 2
3 of 3 www.diodes.com
August 2008
(c) Diodes Incorporated


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